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立德树人,潜心科研?---记彩投网app崔积适博士
发布时间:2022-05-13   浏览次数:164

    崔积适,北京大学博士,现任彩投网app副教授、硕导、副院长,学校人才办主任,引进生党支部副书记。自入职以来,崔积适博士尽职尽责,用行动谱写了一首奉献之歌。

     一.研究领域

    1.半导体材料的生长、纳米结构的制备及特性表征:

    半导体晶体(主要为宽禁带半导体)材料的外延生长、纳米结构的制备,特性表征及应用研究;

    2.硅基光电子器件的设计与测试

    硅基光电探测器、电光调制器、光栅、混频器的设计及测试;

    3.硅基集成光电通信芯片的设计、测试与封装

    面向光互连(1310nm)与光通信(1550nm)的高速硅基光电集成芯片的设计与测试;

    二.科研项目

  参与基金项目:

    1.国家自然科学基金面上项目:具有纳米空腔的大面积柔性GaNLED的制备及特性研究,2014.01-2017.12, 80万;

    2.国家自然科学基金重点项目:基于硅基芯片的超大容量光通信关键技术研究 ,2016.01-2020.12, 300万;                                                                         3.国家自然科学基金面上项目:基于硅基混合表面等离子体波导的纳米聚焦及非线性研究, 2018.01-2021.12, 69万;

  主持基金项目:

    1.国家重点实验室开放基金:高性能硅基光电探测器的研究,2019GZKF4,2019.01-2020.12, 6万;

    2.彩投网app引高项目:硅基集成全硅长波长吸收光电探测器的研究,18YG14,2018.12-2021.12, 20万;

    3.福建省教育厅中青年项目:高质量自支撑Ga2O3薄膜的制备及特性表征,JAT190693,2020.01-2021.12, 2万;

    4.彩投网app国家自然科学基金培育基金:CMOS兼容的C波段应力硅探测器的制备及机理研究,PYT2007,2020.12-2023.12, 2万;

    5.国家重点实验室开放基金:硅基集成应力硅调制器和探测器的制备及机理研究,2021GZKF001,2021.01-2022.12, 8万;

    6.福建省自然科学基金面上项目:一阶电光效应硅基调制器的制备及机理研究,2021J01600,2021.08.01-2024.08.01,10万;

    7.教育部协同育人项目:硅基光电芯片设计及集成工艺的虚拟仿真,202102391032,2021.12.17-2023.12.16, 2万;

    三.学术成果

   1.发表SCI论文:

   (1)Hongdi Xiao, Haiyan Pei, Jianqiang Liu, Jishi Cui, Bo Jiang, Qingjie Hou, Wenrong Hu; Fabrication, characterization, and photocatalysis of GaN–Ga2O3 core-shell nanoparticles[J].Materials Letters,71 (2012) 145-147.

   (2) Hongdi Xiao, Jianqiang Liu, Caina Luan, Ziwu Ji, and Jishi CuiStructure and growth mechanism of quasi-aligned GaN layer-built nanotowers[J]. Applied Physics Letters 100 (2012) 213101.

   (3) Jishi Cui, Hongdi Xiao, Jianqiang Liu, Caina Luan, Ziwu Ji, Haiyan Pei; Morphology and growth mechanism of gallium nitride nanotowers synthesized by metal–organic chemical vapor deposition[J]. Journal of Alloys and Compounds, 563 (2013) 72-76.

   (4) Hongdi Xiao ,Jishi Cui, Dezhong Cao, Qingxue Gao, Jianqiang Liu, Jin Ma; Self-standing nanoporous GaN membranes fabricated by UV-assisted electrochemical anodization[J]. Materials Letters, 71(2015) 304-307.

   (5)Jishi Cui, Hongdi Xiao, Dezhong Cao, Ziwu Ji, Jin Ma; Porosity-induced relaxation of strains at different depth of nanoporous GaN studied using the Z-scan of Raman spectroscopy[J]. Journal of Alloys and Compounds, 626 (2015) 154-157.

   (6) Hangzhou Xu, Hongdi Xiao, Haiyan Pei, Jishi Cui,Wenrong Hu; Photodegradation activity and stability of porous silicon wafers with (100) and (111) oriented crystal planes[J]. Microporous and Mesoporous Materials, 204 (2015) 251–256.

   (7) Dezhong Cao, Hongdi Xiao, Hangzhou Xu,Jishi Cui, Qingxue Gao, Haiyan Pei; Enhancing the photocatalytic activity of GaN by electrochemical etching[J]. Materials Research Bulletin, 70 (2015) 881–886.

   (8) Zhiping Zhou, Bing Yin, Qingzhong Deng, Xinbai Li, and Jishi Cui, Lowering the energy consumption in silicon photonic devices and systems [Invited][J]. Photonics Research, 2015, 3(5): B28-B46.

   (9) Rui Ye,Chao Xu,Xingjun Wang,Jishi Cui,and Zhiping Zhou,Room-temperature near-infrared up-conversion lasing in single-crystal Er-Y chloride silicate nanowires[J]. Scientific Reports, 6 (2016) 34407.

   (10) Jishi Cui, Dezhong Cao, Qingxue Gao, Xiaokun Yang, Jianqiang Liu, Jin Ma, Hongdi Xiao, Porosity-induced weakening of piezo response in GaN layers by means of piezoelectric force microscopy[J]. Materials Letters, 208 (2017) 31-34.

   (11) Jishi Cui, Zhiping Zhou, High performance Ge-on-Si photodetector with optimized DBR location, Optics Letters, 42 (2017) 5141-5144.

   (12) Jishi Cui, Bowen Bai, Fenghe Yang, andZhiping Zhou, Optical saturation characteristics of dual-and single-injection Ge-on-Si photodetectors[J]. Chinese Optics Letters, 2018, v.16(07):82-85.

   (13) Jishi Cui, Tiantian Li, Hongmin Chen, Wenjing Cui. High-Performance Microring Resonator Ge-on-Si Photodetectors by Optimizing Absorption Layer Length[J]. IEEE Photonics Journal, 2020, 12(4): 1-8.

   (14) Jishi Cui, Tiantian Li, Fenghe Yang, Wenjing Cui, Hongmin Chen. The dual-injection Ge-on-Si photodetectors with high saturation power by optimizing light field distribution[J]. Optics Communications, 2021, 480: 126467.

   (15) Jishi Cui, Jianping Zhou, Hongmin Chen, Hongdi Xiao. Effect of Ultraviolet and room lights on porous GaN films using photo-assisted electrochemical etching[J]. Materials Letters, 2021: 130287.

   (16) Jishi Cui, Hongmin Chen, Jianping Zhou, Tiantian Li. High Performance Ge-on-Si Photodetector With Optimized Light Field Distribution by Dual-Injection[J]. IEEE Photonics Journal, 2022, 14(2): 1-4.

    2.授权发明专利:

   (1)发明名称:光波导探测器与光模块,专利号:CN201610113602.7,发明人:费永浩、崔积适、朱以胜;

   (2)发明名称:一种用于C波段的应力硅探测器及制作方法,专利号:CN201711267068.6,发明人:周治平、崔积适

   (3)发明名称:一种基于Slot波导的锗探测器及制作方法,专利号:CN201711207688.0,发明人:周治平、崔积适

   (4)美国发明专利:Yonghao Fei, Jishi Cui, and Yisheng Zhu. Optical waveguide detector and optical module. U.S. Patent No. 10,446,707. 15 Oct. 2019.

   (5)发明名称:基于硅基锗光电探测器的光电探测方法和系统及设备,专利号:ZL201811319994.8,发明人:崔积适,刘持标,邱锦明,陈洪敏;

彩投网app:   (6)发明名称:一种电容式光电探测器及制作工艺,专利号:ZL201811253035.0,发明人:崔积适,刘持标,邱锦明,陈洪敏;

   (7)发明名称:一种自支撑锗薄膜的制备方法及锗薄膜,专利号:ZL201910088551.0,发明人:崔积适

   (8)发明名称:一种具有电流放大作用的硅光电探测器,专利号:ZL201911176655.3,发明人:崔积适

   (9)发明名称:一种基于石墨烯的光电探测器,专利号:ZL201910614105.9,发明人:崔积适

   (10)发明名称:硅基电光调制器的调制臂长度设置方法及设备,专利号:ZL201811321140.3,发明人:崔积适,刘持标,邱锦明,陈洪敏;

   (11)发明名称:一种新型侧向pn结光电探测器,专利号:ZL202010575846.3,发明人:崔积适,王娟,崔文静,陈洪敏;

   (12)发明名称:一种光电微环及光电探测器,专利号:ZL202010574928.6,发明人:崔积适

   (13)发明名称:一种新型光电探测器,专利号:ZL202010575950.2,发明人:崔积适

   (14)发明名称:一种新型电容式光电探测器,专利号:ZL202010574763.2,发明人:崔积适

   (15)发明名称:一种光栅结构的硅基全硅表面吸收探测器及其制备方法,专利号:ZL202010997856.6,发明人:崔积适

    (彩投网app/供稿)


 
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